Seminarium Fizyki Ciała Stałego

Hydrogen in ZnO has been widely studied in the quest to achieve p-type material since, on the basis of ab initio calculation, has been addressed as responsible for its unintentional n-type conductivity. Therefore, experimentally observed increases in active donor concentrations following hydrogen introduction have been attributed, almost without questioning, to hydrogen donor activity. That is, alternative sources of n-type doping involving, as an example, extrinsic defects already present in the material have been, a priori neglected or not quantified.A study where the impact of hydrogen implantation in hydrothermally grown ZnO is revealed by combining reaction dynamics calculations with temperature dependent Hall, photoluminescence, and secondary ion mass spectrometry measurements will be presented. It will be shown that Al and Li, two impurities commonly found in hydrothermally grown ZnO, as well as the concentration of Zn vacancies created because of damaging play a major role in determining the n-type conductivity increase following hydrogen implantation. Taking into account these contributions the maximum percentage of the implanted hydrogen acting as a donor in the investigated range is found to be ≲ 2%, which is considerably lower than previously reported.UwagaSeminarium w trybie zdalnympatrz instrukcja :instrukcja: (pdf file)AttentionThe seminar in the remote modesee instruction :instruction: (pdf file)