Seminarium Fizyki Ciała Stałego

Van der Waals heterostructures based on hexagonal boron nitride (h-BN) and other 2D materials may pave the way for future electronic applications. Wafer-scale uniform h-BN substrates are a must in this respect. The seminar will be focused on the properties of boron nitride samples grown by MOVPE at the Faculty of Physics University of Warsaw. Experimental results (SEM, Raman, XRD, PL) for the material obtained in different growth regimes will be discussed. The main subject of the presentation will be a new approach – two stage epitaxial growth. This idea can be regarded as homoepitaxial growth of h-BN on a self-limiting buffer [1]. Our studies show that the buffer layer allows to control the nucleation at the crucial early stages of BN layer growth, suppressing unwanted out-of-plane growth. It can also be used to control the density of point-like defects responsible for unwanted luminescence from the h-BN layer.[1] A. K. Dąbrowska, M. Tokarczyk, G. Kowalski, J. Binder, R. Bożek, J. Borysiuk, R. Stępniewski, A. Wysmołek,Two stage epitaxial growth of wafer-size multilayer h-BN by metal-organic vapor phase epitaxy – a homoepitaxial approach.2021 2D Mater. 8 015017This work has been partially supported by the National Science Centre under grant no. 2019/33/B/ST5/02766UwagaSeminarium w trybie zdalnympatrz instrukcja :instrukcja: (pdf file)AttentionThe seminar in the remote modesee instruction :instruction: (pdf file)