Seminarium Fizyki Ciała Stałego
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2020-12-18 (10:15) 
dr Henryk Turski (Instytut Wysokich Ciśnień PAN)
The ongoing struggle for high dopant concentration in GaN
GaN and its related alloys are wide bandgap semiconductors with abundance of applications in everyday life optoelectronics and emerging field of high frequency high power electronics. Undoubted success of this family of materials was triggered by the achievement of controllable p-type doping. In the present talk I will focus on recent studies that test the limits of both p- and n-type doping in Nitrides and its applicability in nitride tunnel junctions.