Seminarium Fizyki Ciała Stałego
sala 0.06, ul. Pasteura 5
2022-04-01 (10:15) 
prof. dr hab. inż. Michał Boćkowski (Institute of High Pressure Physics Polish Academy of Sciences)
“GaN-on-GaN technology”
Three main growth methods for crystallizing bulk GaN: i/ halide vapor phase epitaxy (HVPE); ii/ ammonothermal (basic and acidic); iii/ sodium flux will be discussed. All these methods seem to be very perspective for obtaining bulk GaN and fabricating high quality GaN substrates. Ammonothermal GaN crystals demonstrate perfect structural quality; it can still be improved and transferred to HVPE-GaN. HVPE technology is also the best for growing drift layers for electronic devices. Ultra-high-pressure annealing (UHPA) is a very promising technology for fabricating devices with selectively implanted areas.UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :instruction: (pdf file)