Seminarium Fizyki Ciała Stałego

III-N semiconductors (AlInGaN) are critical materials for modern optoelectronics. Light emitters based on these semiconductors (laser diodes and LEDs) can be adapted to operate at various wavelengths covering the visible and ultraviolet part of the spectrum. At the same time, group III nitrides are the first widely used semiconductors that combine a wide band gap and a non-cubic crystallographic structure. This situation forced the industry to face several new phenomena, such as the presence of a strong internal electric field in quantum structures, the problem of effective doping, and finally the presence of high dislocation density. As part of this presentation, I would like to show that with the increasing maturity of technology, some problems have been solved, some have turned out to be beneficial rather than problematic, but some remain unresolved. The emergence of efficient, visible light sources coincides with the demand for emerging quantum technologies. Using the example of optical atomic clocks, I will show the path of development of optical elements, such as laser diodes with adjustable wavelength of visible light and semiconductor optical amplifiers. Finally, I will discuss the challenges of building a nitride-based photonic integrated circuit.UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :instruction: (pdf file)