Seminarium Fizyki Materii Skondensowanej

The magnetoresistive random-access memory (MRAM) is one of the promising candidates for faster and more efficient non-volatile computer memory. Among various realizations of MRAM technology some are based on the spin-orbit torque (SOT) mechanism. The family of ferromagnetic 2D systems with typical 2D crystal structures presents in-equivalent properties at K and K' offering the chance to manipulate the topology and show properties tailor-made for the development of this technology. In my talk, I will introduce an effective model of ferromagnetic 2D systems based on the Kane-Mele model, in which non-trivial topology and electron correlations are intertwined to obtain among other phases the ferrovalley insulator and quantum anomalous Hall insulators. The results for this model obtained using the cluster perturbation theory will be discussed with emphasis on the allowed topological phase transitions driven by the change of the model parameters. Among the materials to which we can apply this system, we have several proposed 2D ferromagnetic materials RuCl2, and a recently synthesized family of materials MA_2Z_4 (M,A,Z represent the Vand Cr magnetic transition metal atom, IV-element and V elements respectively) and their Janus phases.