Seminarium Fizyki Ciała Stałego

Although GaN-based light emitting devices have revolutionized everyday life in the last decades, the research on the topic is still intense.One particular area is in the processing and packaging of devices, where recently new developments in the field of ohmic contacts have been demonstrated.The standard Ti/Al/TiN/Au and Ni/Au alloyed ohmic contacts are well established for n-GaN and p-GaN respectively, but new ideas,such as transparent conducting oxide (TCO) - based solutions have been proposed with success in increasing device efficiency.This research is based on the most popular, but unsustainable TCO indium-tin oxide, ITO.This presentation will be focused on the applicability of another TCO based on earth-abundand materials,namely Al-doped zinc oxide (AZO) and its application in ohmic contacts to both n- and p-type GaN layers in laser diodes.By appropriate engineering of the deposition process room-deposited AZO was achieved with record low conductivity.This makes it compatible with lift-of photolithography. A series of interface engineering steps will be presented resulting in high quality ohmic contacts.Finally, laser diode performance measurements will be shown indicating that the new AZO-based contacts improve the efficiency of the devices when compared with traditional metallizations.This research was supported by the National Centre for Research and Development, Poland, project 'OxyGaN' M ERA.NET2/2019/6/2020UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :instruction: (pdf file)