Seminarium Fizyki Ciała Stałego

Quantum technologies based on point defects in nitridesJ. Zuniga-PerezMajulab, IRL 3654, CNRS, NTU, UCA, SU, NUS, Singapore CRHEA, UCA, CNRS, Rue Bernard Gregory, 06560 Valbonne, France *E-mail: jesus.zuniga@ntu.edu.sgPoint defects is crystalline materials can behave as artificial atoms with optical and spin properties that enable their exploitation as quantum emitters and quantum sensors.In this talk we will address the use of point defects in GaN as single-photon emitters operating at room-temperature and emitting in the telecom wavelength range, as well as their integration into photonic structures in order to modify their emission properties [1]. In the second part, we will exploit negatively-charged boron vacancies in hBN to implement a quantum strain sensor capable of providing spatially-resolved strain maps with micrometre resolution that, when combined with microRaman measurements, can determine the three principal strain tensor components [2]. Finally, we will integrate this quantum sensor with a plasmonic metasurface in order to enhance the emission of the point defects and augment its extraction, resulting in faster sensors displaying a better signal-to-noise ratio [3].[1] M. Meunier et al., Nanophotonics 12 (2023) 1405 [2] X. Lyu et al., Nano Lett. 22 (2022) 6553 [3] H. Cai et al., Nano Lett. 23 (2023) 4991