Seminarium Fizyki Ciała Stałego

Hexagonal boron nitride (h-BN) attracted great interest due to its excellent chemical stability, thermal conductivity and vast potential applications in deep-UV optoelectronics or in van der Waals heterostructures. It is clear that the bottleneck for industrial applications of hBN and other 2D materials is the possibility to fabricate high-quality large-area layers.In the first part of my presentation I will address this issue and show results on the growth of epitaxial h-BN on sapphire by metalorganic vapour-phase epitaxy (MOVPE) [1-4], which is currently regarded as one of the most promising growth techniques. I will show that the growth of a 2D material on a conventional substrate at high temperatures followed by a cool down to room temperature will lead to wrinkle formation [1,5, 6], which can be used to assess the quality of the grown layer.In the second part, I will focus on the properties of h-BN in general and of our epitaxial BN in particular, with a detailed characterization and discussion of the properties.The last part will be dedicated to applications of our MOVPE-grown h-BN ranging from large-area growth of vdW heterostructures [7], defects and single photon emitters [3, 8, 9], photonic applications like the growth of Bragg mirrors [10] to hydrogen generation and storage applications [1]. [1] J. Binder et al. Nano Letters 23, 1267−1272 (2023)[2] M. Tokarczyk et. Al. 2D Materials 10, 025010 (2023)[3] K. P. Korona et al. Nanoscale 15, 9864 (2023)[4] A. K. Dabrowska et al. 2D Materials 8, 015017 (2021)[5] J. Iwanski et al. Nanotechnology 34, 015202 (2023)[6] P. Tatarczak et al. Nanotechnology 35 175703 (2024)[7] K. Ludwiczak et al. ACS Appl. Mater. Interfaces 13, 47904 (2021)[8] M. Koperski et al. Scientific Reports 11:15506 (2021) [9] A. Dabrowska et al. Journal of Luminescence 269, 120486 (2024)[10] A. Ciesielski et al. Nanotechnology 35, 055202 (2024)